Invention Grant
- Patent Title: Method for enabling optimized material deposition
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Application No.: US15685830Application Date: 2017-08-24
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Publication No.: US10519544B2Publication Date: 2019-12-31
- Inventor: Paul Sheedy , Neal Magdefrau
- Applicant: United Technologies Corporation
- Applicant Address: US CT Farmington
- Assignee: United Technologies Corporation
- Current Assignee: United Technologies Corporation
- Current Assignee Address: US CT Farmington
- Agency: Kinney & Lange, P.A.
- Main IPC: C23C16/455
- IPC: C23C16/455 ; C23C16/27 ; C23C16/26 ; C23C16/32 ; C23C16/54 ; F01D5/28

Abstract:
A method for atomic layer deposition of high temperature materials from single source precursors includes placing a substrate in a reaction zone in gas isolation from other reaction zones and contacting the substrate in the reaction zone with a reactant to allow atoms in the reactant to combine with reaction sites on the substrate to form a layer of the reactant on the substrate. The substrate is then placed in a purge zone and purged with a flowing inert gas. The substrate is then placed in a final reaction zone in gas isolation from the other zones wherein the final reaction zone has an atmosphere and temperature to decompose adsorbed reactant and/or form desired phases with crystallinity to form a layer of material. The substrate is then placed in a purge zone and the process is repeated until a layer of material of desired thickness is formed on the substrate.
Public/Granted literature
- US20190062911A1 METHOD FOR ENABLING OPTIMIZED MATERIAL DEPOSITION Public/Granted day:2019-02-28
Information query
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