Invention Grant
- Patent Title: High-speed semiconductor modules
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Application No.: US15264579Application Date: 2016-09-13
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Publication No.: US10522506B2Publication Date: 2019-12-31
- Inventor: Kyoungsoo Kim , SunWon Kang
- Applicant: Kyoungsoo Kim , SunWon Kang
- Applicant Address: KR
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR
- Agency: Renaissance IP Law Group LLP
- Priority: KR10-2015-0181147 20151217
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L25/065 ; H01L23/498 ; H01L23/50 ; H01L25/10

Abstract:
A semiconductor module, comprising: a module substrate with an electric connection element; at least one semiconductor package provided on the module substrate, the at least one semiconductor package including a plurality of semiconductor chips; and a connection region electrically connecting the semiconductor package to the module substrate, wherein the connection region comprises: a first region electrically connected between data signal terminals of a first chip of the semiconductor chips of the semiconductor package and the module substrate; a second region electrically connected between data signal terminals of a second chip of the semiconductor chips of the semiconductor package and the module substrate; and a third region electrically connected between command/address signal terminals of both the first and second chips of the semiconductor package and the module substrate, wherein the first region is closer to the electric connection element of the module substrate, compared with the third region.
Public/Granted literature
- US20170179079A1 HIGH-SPEED SEMICONDUCTOR MODULES Public/Granted day:2017-06-22
Information query
IPC分类: