- 专利标题： HEMT transistor of the normally off type including a trench containing a gate region and forming at least one step, and corresponding manufacturing method
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申请号： US15159045申请日： 2016-05-19
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公开(公告)号： US10522646B2公开(公告)日： 2019-12-31
- 发明人: Ferdinando Iucolano , Alfonso Patti , Alessandro Chini
- 申请人： STMICROELECTRONICS S.R.L.
- 申请人地址： IT Agrate Brianza
- 专利权人： STMICROELECTRONICS S.R.L.
- 当前专利权人： STMICROELECTRONICS S.R.L.
- 当前专利权人地址： IT Agrate Brianza
- 代理机构： Seed Intellectual Property Law Group LLP
- 优先权： IT102015000072111 20151112
- 主分类号： H01L29/15
- IPC分类号： H01L29/15 ; H01L29/66 ; H01L29/423 ; H01L29/778 ; H01L29/205 ; H01L29/20
摘要：
A HEMT transistor of the normally off type, including: a semiconductor heterostructure, which comprises at least one first layer and one second layer, the second layer being set on top of the first layer; a trench, which extends through the second layer and a portion of the first layer; a gate region of conductive material, which extends in the trench; and a dielectric region, which extends in the trench, coats the gate region, and contacts the semiconductor heterostructure. A part of the trench is delimited laterally by a lateral structure that forms at least one first step. The semiconductor heterostructure forms a first edge and a second edge of the first step, the first edge being formed by the first layer.
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