发明授权
- 专利标题： Lithographic method
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申请号： US16132520申请日： 2018-09-17
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公开(公告)号： US10527958B2公开(公告)日： 2020-01-07
- 发明人: Patricius Aloysius Jacobus Tinnemans , Edo Maria Hulsebos , Henricus Johannes Lambertus Megens , Sudharshanan Raghunathan , Boris Menchtchikov , Ahmet Koray Erdamar , Loek Johannes Petrus Verhees , Willem Seine Christian Roelofs , Wendy Johanna Martina Van De Ven , Hadi Yagubizade , Hakki Ergün Cekli , Ralph Brinkhof , Tran Thanh Thuy Vu , Maikel Robert Goosen , Maaike Van't Westeinde , Weitian Kou , Manouk Rijpstra , Matthijs Cox , Franciscus Godefridus Casper Bijnen
- 申请人： ASML NETHERLANDS B.V.
- 申请人地址： NL Veldhoven
- 专利权人： ASML Netherlands B.V.
- 当前专利权人： ASML Netherlands B.V.
- 当前专利权人地址： NL Veldhoven
- 代理机构： Pillsbury Winthrop Shaw Pittman LLP
- 优先权： EP17193637 20170928; EP18164511 20180328; EP18166720 20180411
- 主分类号： G03F7/20
- IPC分类号： G03F7/20 ; G03F9/00
摘要：
A method for determining one or more optimized values of an operational parameter of a sensor system configured to measure a property of a substrate is disclosed. The method includes: determining a quality parameter for a plurality of substrates; determining measurement parameter values for the plurality of substrates using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameter values; and determining the one or more optimized values of the operational parameter based on the comparing.
公开/授权文献
- US20190094721A1 LITHOGRAPHIC METHOD 公开/授权日：2019-03-28
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