发明授权
- 专利标题： Method and structure to construct cylindrical interconnects to reduce resistance
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申请号： US15882301申请日： 2018-01-29
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公开(公告)号： US10529662B2公开(公告)日： 2020-01-07
- 发明人: Benjamin D. Briggs , Michael Rizzolo , Christopher J. Penny , Huai Huang , Lawrence A. Clevenger , Hosadurga Shobha
- 申请人： International Business Machines Corporation
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Ryan, Mason & Lewis, LLP
- 代理商 Vazken Alexanian
- 主分类号： H01L23/528
- IPC分类号： H01L23/528 ; H01L23/522 ; H01L21/768 ; H01L21/3105 ; H01L21/311 ; H01L21/3213
摘要：
A method for manufacturing a semiconductor device includes forming a plurality of trenches in a dielectric layer, wherein the plurality of trenches each comprise a rounded surface, depositing a liner layer on the rounded surface of each of plurality of trenches, and depositing a conductive layer on the liner layer in each of the plurality of trenches, wherein the conductive layer and the liner layer form a plurality of interconnects, and each of the plurality of interconnects has a cylindrical shape.
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