Invention Grant
- Patent Title: Packaging structure of a microelectronic device having a hermeticity improved by a diffusion barrier layer
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Application No.: US15101825Application Date: 2013-12-06
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Publication No.: US10532924B2Publication Date: 2020-01-14
- Inventor: Damien Saint-Patrice , Arnoldus Den Dekker , Marcel Giesen , Gudrun Henn , Jean-Louis Pornin , Bruno Reig
- Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES , EPCOS AG
- Applicant Address: FR Paris DE Munich
- Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES,EPCOS AG
- Current Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES,EPCOS AG
- Current Assignee Address: FR Paris DE Munich
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- International Application: PCT/IB2013/002991 WO 20131206
- International Announcement: WO2015/082953 WO 20150611
- Main IPC: H01L41/053
- IPC: H01L41/053 ; B81B7/00 ; B81C1/00

Abstract:
A packaging structure including at least one hermetically sealed cavity in which at least one microelectronic device is arranged, the cavity being formed between a substrate and at least one cap layer through which several release holes are formed. Several separated portions of metallic material are provided such that each of the separated portions of metallic material is arranged on the cap layer above and around one of the release holes and forms an individual and hermetical plug of said one of the release holes. At least one diffusion barrier layer including at least one non-metallic material is arranged on the cap layer and forms a diffusion barrier against an atmosphere outside the cavity at least around the release holes. Parts of the diffusion barrier layer are not covered by the portions of metallic material.
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