Invention Grant
- Patent Title: Light emitting device and method of manufacturing same
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Application No.: US16024605Application Date: 2018-06-29
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Publication No.: US10535641B2Publication Date: 2020-01-14
- Inventor: Shinichi Daikoku , Daisuke Sanga
- Applicant: NICHIA CORPORATION
- Applicant Address: JP Anan-Shi
- Assignee: NICHIA CORPORATION
- Current Assignee: NICHIA CORPORATION
- Current Assignee Address: JP Anan-Shi
- Agency: Foley & Lardner LLP
- Priority: JP2017-129965 20170630; JP2018-105648 20180531
- Main IPC: H01L25/16
- IPC: H01L25/16 ; H01L33/00 ; H01L33/60 ; H01L33/50 ; H01L33/54 ; H01L33/62 ; H01L33/38 ; H01L33/20 ; H01L33/22 ; H01L33/40

Abstract:
A method of manufacturing a light emitting device includes: providing a semiconductor stack including a first semiconductor layer and a second semiconductor layer; forming light emitting cells by forming grooves in column and row directions; exposing a portion of the first semiconductor layer from the second semiconductor layer in each light emitting cell; forming a first insulation layer having a first hole on the light emitting cells and the grooves; forming a wiring electrode to be in electrical connection with the first semiconductor layer at the first hole in each light emitting cell; forming a second hole in the first insulation layer; forming a second electrode to be in electrical connection with the second semiconductor layer at the second hole; thinning the first semiconductor layer; and exposing the first insulation layer from the first semiconductor layer at the grooves while roughening the surface of the first semiconductor layer.
Public/Granted literature
- US20190006336A1 LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING SAME Public/Granted day:2019-01-03
Information query
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