- 专利标题： Method for fabricating semiconductor device
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申请号： US15983077申请日： 2018-05-17
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公开(公告)号： US10541304B2公开(公告)日： 2020-01-21
- 发明人: Chih-Kai Hsu , Ssu-I Fu , Yu-Hsiang Hung , Wei-Chi Cheng , Jyh-Shyang Jenq
- 申请人： UNITED MICROELECTRONICS CORP.
- 申请人地址： TW Hsin-Chu
- 专利权人： UNITED MICROELECTRONICS CORP.
- 当前专利权人： UNITED MICROELECTRONICS CORP.
- 当前专利权人地址： TW Hsin-Chu
- 代理商 Winston Hsu
- 优先权： TW105125383A 20160810
- 主分类号： H01L29/08
- IPC分类号： H01L29/08 ; H01L29/78 ; H01L21/8238 ; H01L29/66 ; H01L27/092 ; H01L29/423
摘要：
A method for fabricating semiconductor device includes the steps of: providing a substrate; forming a gate structure on the substrate; forming a spacer adjacent to the gate structure; forming a recess adjacent to the spacer; forming a buffer layer in the recess, wherein the buffer layer comprises a crescent moon shape; and forming an epitaxial layer on the buffer layer.
公开/授权文献
- US20180269288A1 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE 公开/授权日：2018-09-20
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