- Patent Title: Memory system, reading method thereof and writing method thereof
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Application No.: US15472319Application Date: 2017-03-29
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Publication No.: US10545805B2Publication Date: 2020-01-28
- Inventor: Shih-Chung Wang
- Applicant: MACRONIX INTERNATIONAL CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: G06F11/00
- IPC: G06F11/00 ; G06F11/07 ; G06F11/10 ; G11C29/00 ; G11C29/52 ; G11C29/44

Abstract:
A memory system, a reading method and a writing method are provided. The memory system includes a memory controller and a memory array electrically connected to the memory controller. A parity information is stored in the memory array. The memory array includes a plurality of memory devices. The reading method comprises the following steps: A reading command for requesting a user data stored in the memory array is received from a host interface. The user data is recovered according to the parity information when the user data is error at one of the memory devices. The user data, which is recovered, is transferred to the host interface and the user data is refreshed.
Public/Granted literature
- US20180285185A1 MEMORY SYSTEM, READING METHOD THEREOF AND WRITING METHOD THEREOF Public/Granted day:2018-10-04
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