The disclosed technology generally relates to semiconductor fabrication and more particularly to a method of forming vertical channel devices. In one aspect, a method of forming vertical channel devices includes providing a semiconductor structure that includes a substrate and a plurality of vertical channel structures. The method additionally includes surrounding the vertical channel structures with respective wrap-around gates. The method additionally includes forming enlarged top portions by selectively growing a doped semiconductor material on respective top portions of at least a subset of the vertical channel structures. The method further includes forming a top electrode on each of the enlarged top portions.