Invention Grant
- Patent Title: Power deposition control in inductively coupled plasma (ICP) reactors
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Application No.: US14463205Application Date: 2014-08-19
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Publication No.: US10553398B2Publication Date: 2020-02-04
- Inventor: Samer Banna , Tza-Jing Gung , Vladimir Knyazik , Kyle Tantiwong , Dan A. Marohl , Valentin N. Todorow , Stephen Yuen
- Applicant: APPLIED MATERIALS, INC.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Moser Taboad
- Agent Alan Taboada
- Main IPC: H01J37/32
- IPC: H01J37/32

Abstract:
Embodiments of inductively coupled plasma (ICP) reactors are provided herein. In some embodiments, a dielectric window for an inductively coupled plasma reactor includes: a body including a first side, a second side opposite the first side, an edge, and a center, wherein the dielectric window has a dielectric coefficient that varies spatially. In some embodiments, an apparatus for processing a substrate includes: a process chamber having a processing volume disposed beneath a lid of the process chamber; and one or more inductive coils disposed above the lid to inductively couple RF energy into and to form a plasma in the processing volume above a substrate support disposed within the processing volume; wherein the lid is a dielectric window comprising a first side and an opposing second side that faces the processing volume, and wherein the lid has a dielectric coefficient that spatially varies to provide a varied power coupling of RF energy from the one or more inductive coils to the processing volume.
Public/Granted literature
- US20150068682A1 POWER DEPOSITION CONTROL IN INDUCTIVELY COUPLED PLASMA (ICP) REACTORS Public/Granted day:2015-03-12
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