Invention Grant
- Patent Title: Process-invariant resistor and capacitor pair
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Application No.: US15710737Application Date: 2017-09-20
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Publication No.: US10553531B2Publication Date: 2020-02-04
- Inventor: Chao Song , Xuhao Huang , Marzio Pedrali-Noy
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Haynes and Boone, LLP
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01P1/203 ; H05K3/30 ; H01L21/74 ; H01L21/82 ; H01L27/01 ; H01L49/02
Abstract:
A process-invariant RC circuit is formed by patterning a metal layer using the same mask pattern to form a metal layer resistor and a metal layer capacitor. The same mask pattern results in the metal layer resistor and the metal layer capacitor each having a plurality of longitudinally-extending fingers having the same width and separation.
Public/Granted literature
- US20190089030A1 PROCESS-INVARIANT RESISTOR AND CAPACITOR PAIR Public/Granted day:2019-03-21
Information query
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