Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
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Application No.: US15413466Application Date: 2017-01-24
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Publication No.: US10553582B2Publication Date: 2020-02-04
- Inventor: Yoonjae Kim , Cheol Kim , Yong-Hoon Son , Jin-Hyuk Yoo , Woojin Jung
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine, Whitt & Francos, PLLC
- Priority: KR10-2016-0052146 20160428
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L27/088 ; H01L21/8234 ; H01L23/485 ; H01L21/768 ; H01L21/306 ; H01L21/311 ; H01L27/02 ; H01L29/06 ; H01L29/08 ; H01L29/10 ; H01L29/423 ; H01L29/66 ; H01L21/8238 ; H01L29/165
Abstract:
A semiconductor device includes a substrate having an active pattern, a conductive pattern crossing the active pattern, a spacer structure on at least one side surface of the conductive pattern, and a capping structure on the conductive pattern. The capping structure includes a first capping pattern and a second capping pattern. The second capping pattern is disposed on a top surface of the first capping pattern and a top surface of the spacer structure.
Public/Granted literature
- US20170317079A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2017-11-02
Information query
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