Invention Grant
- Patent Title: Method for manufacturing semiconductor fin structure with extending gate structure
-
Application No.: US15804787Application Date: 2017-11-06
-
Publication No.: US10553706B2Publication Date: 2020-02-04
- Inventor: Che-Cheng Chang , Chih-Han Lin
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/78 ; H01L29/06 ; H01L29/40 ; H01L29/423 ; H01L21/762
Abstract:
A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a substrate and a fin structure formed over the substrate. The semiconductor structure further includes an isolation structure formed around the fin structure and a gate structure formed across the fin structure. In addition, the gate structure includes a first portion formed over the fin structure and a second portion formed over the isolation structure, and the second portion of the gate structure includes an extending portion extending into the isolation structure.
Public/Granted literature
- US20180069101A1 METHOD FOR MANUFACTURING SEMICONDUCTOR FIN STRUCTURE WITH EXTENDING GATE STRUCTURE Public/Granted day:2018-03-08
Information query
IPC分类:
