A lithographic apparatus including a support structure constructed to support a mask having a patterned area which is capable of imparting an EUV radiation beam with a pattern in its cross-section to form a patterned radiation beam, wherein the support structure is movable in a scanning direction, a substrate table constructed to hold a substrate, wherein the substrate table is movable in the scanning direction, and a projection system configured to project the patterned radiation beam onto an exposure region of the substrate, wherein the projection system has a demagnification in the scanning direction which is greater than a demagnification in a second direction which is perpendicular to the scanning direction and wherein the demagnification in the second direction is greater than 4×.