- Patent Title: Self-aligned quadruple patterning process for Fin pitch below 20nm
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Application No.: US15271043Application Date: 2016-09-20
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Publication No.: US10559501B2Publication Date: 2020-02-11
- Inventor: Stanley Song , Jeffrey Xu , Da Yang , Kern Rim , Choh Fei Yeap
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L27/092 ; H01L29/10 ; H01L29/66 ; H01L21/3065
Abstract:
A method of producing a FinFET device with fin pitch of less than 20 nm is presented. In accordance with some embodiments, fins are deposited on sidewall spacers, which themselves are deposited on mandrels. The mandrels can be formed by lithographic processes while the fins and sidewall spacers formed by deposition technologies.
Public/Granted literature
- US20180082906A1 NOVEL SELF-ALIGNED QUADRUPLE PATTERNING PROCESS FOR FIN PITCH BELOW 20nm Public/Granted day:2018-03-22
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