Invention Grant
- Patent Title: Three-dimensional semiconductor devices
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Application No.: US16021295Application Date: 2018-06-28
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Publication No.: US10559590B2Publication Date: 2020-02-11
- Inventor: Changhyun Lee , Chanjin Park , Byoungkeun Son , Sung-Il Chang
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2010-0110033 20101105
- Main IPC: H01L27/11578
- IPC: H01L27/11578 ; H01L27/11582 ; H01L27/11551 ; H01L27/11556 ; H01L29/06 ; H01L29/792
Abstract:
A three-dimensional semiconductor device includes an upper structure on a lower structure, the upper structure including conductive patterns, a semiconductor pattern connected to the lower structure through the upper structure, and an insulating spacer between the semiconductor pattern and the upper structure, a bottom surface of the insulating spacer being positioned at a vertical level equivalent to or higher than an uppermost surface of the lower structure.
Public/Granted literature
- US20180323209A1 THREE-DIMENSIONAL SEMICONDUCTOR DEVICES Public/Granted day:2018-11-08
Information query
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