- 专利标题： Solid-state imaging device with phase difference detection pixel and manufacturing method of the same, and electronic apparatus
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申请号： US15169992申请日： 2016-06-01
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公开(公告)号： US10559620B2公开(公告)日： 2020-02-11
- 发明人: Yuichi Seki , Toshinori Inoue , Yukihiro Sayama , Yuka Nakamoto
- 申请人： Sony Corporation
- 申请人地址： JP Tokyo
- 专利权人： Sony Corporation
- 当前专利权人： Sony Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Sheridan Ross P.C.
- 优先权： JP2013-260785 20131218; JP2014-067809 20140328
- 主分类号： H01L27/146
- IPC分类号： H01L27/146 ; H04N5/341
摘要：
There is provided a solid-state imaging device including: an imaging pixel including a photoelectric conversion unit which receives incident light; and a phase difference detection pixel including the photoelectric conversion unit and a light shielding unit which shields some of the light incident to the photoelectric conversion unit, in which the imaging pixel further includes a high refractive index film which is formed on the upper side of the photoelectric conversion unit, and the phase difference detection pixel further includes a low refractive index film which is formed on the upper side of the photoelectric conversion unit.
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