Invention Grant
- Patent Title: Oxide thin film transistor, manufacturing method thereof, array substrate and display device
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Application No.: US15995706Application Date: 2018-06-01
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Publication No.: US10559698B2Publication Date: 2020-02-11
- Inventor: Xiaowei Liu , Bo Liu , Yang Wang , Liangliang Li , Zheng Liu , Hongjiang Wu , Jianfeng Yuan
- Applicant: BOE TECHNOLOGY GROUP CO., LTD. , FUZHOU BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Applicant Address: CN Beijing CN Fujian
- Assignee: BOE TECHNOLOGY GROUP CO., LTD.,FUZHOU BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee: BOE TECHNOLOGY GROUP CO., LTD.,FUZHOU BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Beijing CN Fujian
- Agency: Ladas & Parry LLP
- Agent Hermine Valizadeh
- Priority: CN201710867772 20170922
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L27/12 ; H01L29/66 ; H01L29/423 ; H01L29/417

Abstract:
Embodiments of the present application provide an Oxide TFT, a manufacturing method thereof, an array substrate and a display device. The Oxide TFT includes a base substrate; a gate electrode, a gate insulating layer and an active layer which are located on the base substrate; a source electrode and a drain electrode, the active layer is at least partly covered with the source electrode and the drain electrode; and a channel protection layer located between the source electrode and the drain electrode, each of the source electrode and the drain electrode includes at least part of a first metallic layer and at least part of a second metallic layer, the first metallic and the second metallic layer are stacked one on another, the channel protection layer is of a metal oxide.
Public/Granted literature
- US20190097058A1 OXIDE THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREOF, ARRAY SUBSTRATE AND DISPLAY DEVICE Public/Granted day:2019-03-28
Information query
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