- 专利标题: Method for producing a first electrode/active layer/second electrode stack
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申请号: US15736266申请日: 2016-06-16
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公开(公告)号: US10559771B2公开(公告)日: 2020-02-11
- 发明人: Jean-Marie Verilhac , Simon Charlot
- 申请人: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES , ISORG , TRIXELL
- 申请人地址: FR Paris FR Grenoble FR Moirans
- 专利权人: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES,ISORG,TRIXELL
- 当前专利权人: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES,ISORG,TRIXELL
- 当前专利权人地址: FR Paris FR Grenoble FR Moirans
- 代理机构: Baker & Hostetler LLP
- 优先权: FR1555480 20150616
- 国际申请: PCT/EP2016/063922 WO 20160616
- 国际公布: WO2016/202938 WO 20161222
- 主分类号: H01L51/44
- IPC分类号: H01L51/44 ; H01L51/50 ; H01L31/0224 ; H01L51/52 ; H01L51/56
摘要:
A process for producing a stack of a first electrode/active layer/second electrode, which stack is intended for an electronic device, in particular an organic photodetector or an organic solar cell, the process comprises the following steps: (a) depositing a first conductor layer on the front side of a substrate, in order to form the first electrode; and (b) depositing an active layer taking the form of a thin organic semiconductor layer, this layer including discontinuous zones; wherein this process further comprises the following steps: (d) depositing a resist layer on that side of the stack which is opposite the substrate, which is at least partially transparent; (e) exposing the resist layer via the back side of the substrate; (f) developing the resist layer; and (g) depositing a second conductor layer in order to form the conductive second electrode.
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