- 专利标题： Heater for semiconductor manufacturing apparatus
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申请号： US16222001申请日： 2018-12-17
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公开(公告)号： US10566228B2公开(公告)日： 2020-02-18
- 发明人: Keita Yamana , Kazuhiro Nobori , Kengo Torii
- 申请人： NGK INSULATORS, LTD.
- 申请人地址： JP Nagoya
- 专利权人： NGK Insulators, Ltd.
- 当前专利权人： NGK Insulators, Ltd.
- 当前专利权人地址： JP Nagoya
- 代理机构： Burr & Brown, PLLC
- 优先权： JP2018-020637 20180208
- 主分类号： H01L21/683
- IPC分类号： H01L21/683 ; C04B35/645 ; C04B35/581
摘要：
A heater for a semiconductor manufacturing apparatus, the heater includes an AlN ceramic substrate and a heating element embedded inside the AlN ceramic substrate. The AlN ceramic substrate contains O, C, Ti, Ca, and Y as impurity elements, includes an yttrium aluminate phase as a crystal phase, and has a Ti/Ca mass ratio of 0.13 or more, and a TiN phase is not detected in an XRD profile measured with Cu K-α radiation.
公开/授权文献
- US20190244847A1 HEATER FOR SEMICONDUCTOR MANUFACTURING APPARATUS 公开/授权日：2019-08-08
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