Invention Grant
- Patent Title: Smart memory buffers
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Application No.: US16011187Application Date: 2018-06-18
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Publication No.: US10585602B2Publication Date: 2020-03-10
- Inventor: Doe Hyun Yoon , Naveen Muralimanohar , Jichuan Chang , Parthasarathy Ranganathan
- Applicant: Hewlett Packard Enterprise Development LP
- Applicant Address: US TX Houston
- Assignee: Hewlett Packard Enterprise Development LP
- Current Assignee: Hewlett Packard Enterprise Development LP
- Current Assignee Address: US TX Houston
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G06F3/06 ; G06F11/10

Abstract:
An example method involves receiving, at a first memory node, data to be written at a memory location in the first memory node. The data is received from a device. At the first memory node, old data is read from the memory location, without sending the old data to the device. The data is written to the memory location. The data and the old data are sent from the first memory node to a second memory node to store parity information in the second memory node without the device determining the parity information. The parity information is based on the data stored in the first memory node.
Public/Granted literature
- US20180307420A1 SMART MEMORY BUFFERS Public/Granted day:2018-10-25
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