Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
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Application No.: US15844223Application Date: 2017-12-15
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Publication No.: US10586777B2Publication Date: 2020-03-10
- Inventor: Kentaro Yamada , Shigeki Tomaru , Taketoshi Fukushima
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Shapiro, Gabor and Rosenberger, PLLC
- Priority: JP2015-029409 20150218
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/528

Abstract:
To improve the reliability of a semiconductor device.The semiconductor device includes a plurality of wiring layers formed on a semiconductor substrate, a pad formed on an uppermost wiring layer of the plurality of wiring layers, a surface protection film which includes an opening on the pad and is made of an inorganic insulating film, a rewiring formed on the surface protection film; a pad electrode formed on the rewiring, and a wire connected to the pad electrode. The rewiring includes a pad electrode mounting portion on which the pad electrode is mounted, a connection portion which is connected to the pad, and an extended wiring portion which couples the pad electrode mounting portion and the connection portion, and the pad electrode mounting portion has a rectangular shape when seen in a plan view.
Public/Granted literature
- US20180108629A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2018-04-19
Information query
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