Invention Grant
- Patent Title: Semiconductor device and peeling off method and method of manufacturing semiconductor device
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Application No.: US15335854Application Date: 2016-10-27
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Publication No.: US10586816B2Publication Date: 2020-03-10
- Inventor: Toru Takayama , Junya Maruyama , Mayumi Mizukami , Shunpei Yamazaki
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office
- Agent Eric J. Robinson
- Priority: JP2001-216018 20010716; JP2001-299620 20010928
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L21/20 ; H01L21/762 ; H01L33/44 ; G02F1/1362 ; H01L29/24 ; H01L29/786 ; G02F1/136 ; G02F1/1339 ; G02F1/1341 ; H01L27/32

Abstract:
The present invention provides a peeling off method without giving damage to the peeled off layer, and aims at being capable of peeling off not only a peeled off layer having a small area but also a peeled off layer having a large area over the entire surface at excellent yield ratio. The metal layer or nitride layer 11 is provided on the substrate, and further, the oxide layer 12 being contact with the foregoing metal layer or nitride layer 11 is provided, and furthermore, if the lamination film formation or the heat processing of 500° C. or more in temperature is carried out, it can be easily and clearly separated in the layer or on the interface with the oxide layer 12 by the physical means.
Public/Granted literature
- US20170047358A1 SEMICONDUCTOR DEVICE AND PEELING OFF METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2017-02-16
Information query
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