- Patent Title: Silicon carbide semiconductor device and method of manufacturing
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Application No.: US15934518Application Date: 2018-03-23
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Publication No.: US10586851B2Publication Date: 2020-03-10
- Inventor: Andreas Meiser , Caspar Leendertz , Anton Mauder , Roland Rupp
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE102017106398 20170324
- Main IPC: H01L29/16
- IPC: H01L29/16 ; H01L29/66 ; H01L29/78 ; H01L29/06 ; H01L29/739 ; H01L29/04 ; H01L29/417 ; H01L29/40 ; H01L21/02

Abstract:
A semiconductor device includes a trench structure extending from a first surface into a silicon carbide semiconductor body. The trench structure includes an auxiliary electrode at a bottom of the trench structure and a gate electrode arranged between the auxiliary electrode and the first surface. A shielding region adjoins the auxiliary electrode at the bottom of the trench structure and forms a first pn junction with a drift structure. A corresponding method of manufacturing the semiconductor device is also described.
Public/Granted literature
- US20180277637A1 Silicon Carbide Semiconductor Device and Method of Manufacturing Public/Granted day:2018-09-27
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