A light-emitting diode according to an exemplary embodiment includes: a first electrode; a second electrode overlapping the first electrode; an emission layer positioned between the first electrode and the second electrode; and a first capping layer positioned on the first electrode, wherein the first capping layer includes at least one among LiF, MgF2, AlF3, NaF, and AlOx, and a thickness of the first capping layer is 30 nm to 40 nm.