Invention Grant
- Patent Title: Method for fabricating a device with a tensile-strained NMOS transistor and a uniaxial compression strained PMOS transistor
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Application No.: US15452049Application Date: 2017-03-07
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Publication No.: US10600786B2Publication Date: 2020-03-24
- Inventor: Sylvain Maitrejean , Emmanuel Augendre , Pierre Morin , Shay Reboh
- Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES , STMICROELECTRONICS Inc
- Applicant Address: FR Paris US TX Coppell
- Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES,STMICROELECTRONICS Inc
- Current Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES,STMICROELECTRONICS Inc
- Current Assignee Address: FR Paris US TX Coppell
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR1651963 20160309
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H01L21/02 ; H01L21/266 ; H01L21/268 ; H01L21/8238 ; H01L29/10 ; H01L29/66
Abstract:
Manufacture of a transistor device with at least one P type transistor with channel structure strained in uniaxial compression strain starting from a silicon layer strained in biaxial tension, by amorphization recrystallization then germanium condensation.
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