Invention Grant
- Patent Title: Method of measuring a target, and metrology apparatus
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Application No.: US16246004Application Date: 2019-01-11
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Publication No.: US10606178B2Publication Date: 2020-03-31
- Inventor: Olger Victor Zwier
- Applicant: ASML Netherlands B.V.
- Applicant Address: NL Veldhoven
- Assignee: ASML Netherlands B.V.
- Current Assignee: ASML Netherlands B.V.
- Current Assignee Address: NL Veldhoven
- Agency: Sterne, Kessler, Goldstein & Fox P.L.L.C.
- Priority: EP18152036 20180117; EP18152306 20180118
- Main IPC: G03F7/20
- IPC: G03F7/20 ; G03F9/00

Abstract:
Disclosed is a method of measuring a target, and a metrology apparatus. In one arrangement the target comprises a layered structure. The layered structure has a first target structure in a first layer and a second target structure in a second layer. The method comprises illuminating the target with measurement radiation using an illumination profile in the illumination pupil (u) that is offset from an imaginary line (IL) in the illumination pupil passing through the optical axis, to allow propagation to a detection region of the detection pupil of an allowed order (v2, v4) of a predetermined diffraction order while limiting propagation to the detection region of an equal and opposite order (v1′, v3′) of that predetermined diffraction order. Scattered radiation of plural double-diffracted allowed diffraction orders (w2, w4) is detected. A characteristic of the lithographic process is calculated using the detected scattered radiation of the predetermined diffraction orders.
Public/Granted literature
- US20190219931A1 Method of Measuring a Target, and Metrology Apparatus Public/Granted day:2019-07-18
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