- 专利标题: Reduction of cross talk in WLCSP's through laser drilled technique
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申请号: US16525702申请日: 2019-07-30
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公开(公告)号: US10607912B2公开(公告)日: 2020-03-31
- 发明人: Habeeb Mohiuddin Mohammed , Rajesh Subraya Aiyandra
- 申请人: Dialog Semiconductor (UK) Limited
- 申请人地址: GB London
- 专利权人: Dialog Semiconductor (UK) Limited
- 当前专利权人: Dialog Semiconductor (UK) Limited
- 当前专利权人地址: GB London
- 代理机构: Saile Ackerman LLC
- 代理商 Stephen B. Ackerman; Rosemary L. S. Pike
- 主分类号: H01L23/31
- IPC分类号: H01L23/31 ; H01L21/56 ; H01L23/498 ; H01L23/00 ; H01L29/06 ; B81C1/00
摘要:
A wafer level chip scale package is described. The wafer level chip scale package comprises a plurality of redistribution layer (RDL) traces connected to a silicon wafer through openings through a first polymer layer to metal pads on a top surface of the silicon wafer. A plurality of underbump metal (UBM) layers each contact one of the plurality of RDL traces through openings in a second polymer layer over the first polymer layer. A plurality of solder bumps lie on each UBM layer. A metal plating layer lies under the first polymer layer and does not contact any of the plurality of RDL traces. At least one separator lies between at least two of the plurality of RDL traces. The separator is a metal fencing between the two neighboring RDL traces or an air gap between the two neighboring RDL traces.
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