- 专利标题: Semiconductor device
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申请号: US16272287申请日: 2019-02-11
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公开(公告)号: US10608118B2公开(公告)日: 2020-03-31
- 发明人: Shunpei Yamazaki
- 申请人: Semiconductor Energy Laboratory Co., Ltd.
- 申请人地址: JP Kanagawa-ken
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP Kanagawa-ken
- 代理机构: Robinson Intellectual Property Law Office
- 代理商 Eric J. Robinson
- 优先权: JP2009-270857 20091128
- 主分类号: H01L29/10
- IPC分类号: H01L29/10 ; H01L29/786 ; H01L21/02 ; H01L29/66 ; H01L29/04 ; H01L29/22 ; H01L29/221 ; H01L29/24 ; H01L29/26 ; H01L29/423 ; H01L29/45 ; H01L29/49
摘要:
An embodiment is a semiconductor device which includes a first oxide semiconductor layer over a substrate having an insulating surface and including a crystalline region formed by growth from a surface of the first oxide semiconductor layer toward an inside; a second oxide semiconductor layer over the first oxide semiconductor layer; a source electrode layer and a drain electrode layer which are in contact with the second oxide semiconductor layer; a gate insulating layer covering the second oxide semiconductor layer, the source electrode layer, and the drain electrode layer; and a gate electrode layer over the gate insulating layer and in a region overlapping with the second oxide semiconductor layer. The second oxide semiconductor layer is a layer including a crystal formed by growth from the crystalline region.
公开/授权文献
- US20190172952A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 公开/授权日:2019-06-06