Invention Grant
- Patent Title: Back silicided variable capacitor devices
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Application No.: US15957484Application Date: 2018-04-19
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Publication No.: US10608124B2Publication Date: 2020-03-31
- Inventor: Sinan Goktepeli , Fabio Alessio Marino , Narasimhulu Kanike , Plamen Vassilev Kolev , Qingqing Liang , Paolo Menegoli , Francesco Carobolante , Aristotele Hadjichristos
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Patterson & Sheridan, L.L.P.
- Main IPC: H01L29/93
- IPC: H01L29/93 ; H01L29/06 ; H01L29/45

Abstract:
Certain aspects of the present disclosure provide a semiconductor device. One example semiconductor device generally includes a semiconductor region, an insulative layer, a first terminal, and a first non-insulative region coupled to the first terminal, the insulative layer being disposed between the first non-insulative region and the semiconductor region. In certain aspects, the insulative layer is disposed adjacent to a first side of the semiconductor region. In certain aspects, the semiconductor device also includes a second terminal, and a first silicide layer coupled to the second terminal and disposed adjacent to a second side of the semiconductor region, the first side and the second side being opposite sides of the semiconductor region.
Public/Granted literature
- US20190326448A1 BACK SILICIDED VARIABLE CAPACITOR DEVICES Public/Granted day:2019-10-24
Information query
IPC分类: