Invention Grant
- Patent Title: Manufacturing method of light-emitting element
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Application No.: US15634322Application Date: 2017-06-27
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Publication No.: US10608181B2Publication Date: 2020-03-31
- Inventor: Satoshi Seo , Hiromi Seo , Tsunenori Suzuki , Hiromitsu Kido
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP2016-128991 20160629
- Main IPC: H01L51/00
- IPC: H01L51/00 ; C09K11/02 ; C09K11/06 ; H01L51/50

Abstract:
A method for manufacturing a light-emitting element, in particular, a method for manufacturing a light-emitting element with high emission efficiency is provided. In the method for manufacturing a light-emitting element that includes a light-emitting layer containing a host material and a light-emitting material that is an organic compound or an organic metal complex, the light-emitting layer is formed by co-evaporation of the light-emitting material and the host material, and the light-emitting layer is deposited by co-evaporation while the percentage of the partial pressure of carbon dioxide with respect to the total pressure in an evaporation chamber for the co-evaporation is kept higher than that in the air.
Public/Granted literature
- US20180006221A1 Manufacturing Method of Light-Emitting Element Public/Granted day:2018-01-04
Information query
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