发明授权
- 专利标题： Substrate processing apparatus, substrate processing method and recording medium
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申请号： US16163918申请日： 2018-10-18
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公开(公告)号： US10651061B2公开(公告)日： 2020-05-12
- 发明人: Hiroki Ohno , Takao Inada , Hisashi Kawano
- 申请人： Tokyo Electron Limited
- 申请人地址： JP Tokyo
- 专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人地址： JP Tokyo
- 代理机构： Pearne & Gordon LLP
- 优先权： com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@3ef93364
- 主分类号： H01L21/66
- IPC分类号： H01L21/66 ; H01L21/67 ; H01L21/311
摘要：
A substrate processing apparatus includes a processing unit and a control unit. The processing unit is configured to perform an etching processing by immersing a substrate in a processing liquid containing phosphoric acid and a silicon-containing compound. The control unit is configured to control the processing liquid such that the substrate is processed, in a first processing time of the etching processing, with the processing liquid having a first phosphoric acid concentration and a first silicon concentration, and the substrate is processed, in a second processing time later than the first processing time, with the processing liquid having a second preset phosphoric acid concentration lower than the first phosphoric acid concentration and a second preset silicon concentration lower than the first silicon concentration or with the processing liquid having the second preset phosphoric acid concentration and the first silicon concentration.
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