Invention Grant
- Patent Title: Thin film transistor and preparation method thereof, array substrate and display apparatus
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Application No.: US15309949Application Date: 2016-04-08
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Publication No.: US10651211B2Publication Date: 2020-05-12
- Inventor: Zuqiang Wang , Chien Hung Liu
- Applicant: BOE TECHNOLOGY GROUP CO., LTD.
- Applicant Address: CN Beijing
- Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee Address: CN Beijing
- Agency: Dilworth & Barrese, LLP.
- Agent Michael J. Musella, Esq.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@663a0485
- International Application: PCT/CN2016/078844 WO 20160408
- International Announcement: WO2016/202062 WO 20161222
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L27/12 ; H01L29/786

Abstract:
A thin film transistor and a preparation method thereof, an array substrate and a display apparatus are provided. The preparation method includes an operation of forming a low temperature poly silicon active layer; a substrate has a first region and a second region; and the step includes: forming a buffer layer on the first region and the second region of the substrate, the buffer layer having a thickness at a portion corresponding to the first region greater than that at a portion corresponding to the second region; or, forming the buffer layer on the first region of the substrate; forming an amorphous silicon layer on the buffer layer; performing laser crystallization processing on the amorphous silicon layer so as to convert the amorphous silicon layer into a poly silicon layer; and removing the poly silicon layer on the second region, and forming the low temperature poly silicon active layer on the first region.
Public/Granted literature
- US20170250207A1 THIN FILM TRANSISTOR AND PREPARATION METHOD THEREOF, ARRAY SUBSTRATE AND DISPLAY APPARATUS Public/Granted day:2017-08-31
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