Invention Grant
- Patent Title: Semiconductor device and method for fabricating the same
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Application No.: US16239470Application Date: 2019-01-03
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Publication No.: US10651290B2Publication Date: 2020-05-12
- Inventor: Te-Chang Hsu , Chun-Chia Chen , Yao-Jhan Wang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@36fd807a
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/3105 ; H01L21/3115 ; H01L21/02 ; H01L21/768 ; H01L29/417 ; H01L29/51 ; H01L29/49 ; H01L29/78
Abstract:
A method for fabricating semiconductor device includes the steps of first forming a gate structure on a substrate, forming a contact etch stop layer (CESL) on the gate structure, forming an interlayer dielectric (ILD) layer around the gate structure, performing a curing process so that an oxygen concentration of the CESL is different from the oxygen concentration of the ILD layer, and then performing a replacement metal gate process (RMG) process to transform the gate structure into a metal gate.
Public/Granted literature
- US20190140077A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2019-05-09
Information query
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