- 专利标题: Gas control system, deposition apparatus including gas control system, and program and gas control method used for gas control system
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申请号: US15911650申请日: 2018-03-05
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公开(公告)号: US10655220B2公开(公告)日: 2020-05-19
- 发明人: Yuhei Sakaguchi , Toru Shimizu , Masakazu Minami , Daisuke Hayashi
- 申请人: HORIBA STEC, Co., Ltd.
- 申请人地址: JP Kyoto-shi, Kyoto
- 专利权人: HORIBA STEC, Co., Ltd.
- 当前专利权人: HORIBA STEC, Co., Ltd.
- 当前专利权人地址: JP Kyoto-shi, Kyoto
- 代理机构: Alleman Hall Creasman & Tuttle LLP
- 优先权: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@28058452
- 主分类号: G05D11/13
- IPC分类号: G05D11/13 ; C23C16/455 ; C23C16/448
摘要:
The present invention makes it easy to control the amount of material gas led out of a tank. Accordingly, carrier gas is introduced into a tank containing a material and together with the carrier gas, from the tank, material gas produced by vaporization of the material is led out. A control part controls the flow rate of the carrier gas so that a concentration index value obtained by measuring mixed gas led out of the tank and indicating the concentration of the material gas in the mixed gas comes close to a predetermined target concentration index value. In addition, the control part controls the flow rate of the carrier gas to change at a predetermined change rate, and then controls the flow rate of the carrier gas on the basis of the deviation between the concentration index value and the target concentration index value.
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