- 专利标题: Floating boosted pre-charge scheme for sense amplifiers
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申请号: US16104001申请日: 2018-08-16
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公开(公告)号: US10658048B2公开(公告)日: 2020-05-19
- 发明人: Antonino Conte , Loredana Chiaramonte , Anna Rita Maria Lipani
- 申请人: STMicroelectronics S.r.l.
- 申请人地址: IT Agrate Brianza (MB)
- 专利权人: STMICROELECTRONICS S.R.L.
- 当前专利权人: STMICROELECTRONICS S.R.L.
- 当前专利权人地址: IT Agrate Brianza (MB)
- 代理机构: Slater Matsil, LLP
- 主分类号: G11C16/28
- IPC分类号: G11C16/28 ; G11C16/24 ; G11C16/04
摘要:
A sense structure includes: a sense amplifier core configured to compare a measurement current with a reference current; a cascode transistor coupled to the sense amplifier core and configured to be coupled to a load; a switch coupled between a bias voltage node and a control terminal of the cascode transistor; a local capacitor having a first terminal coupled to the control terminal of the cascode transistor; a first transistor coupled between a second terminal of the local capacitor and a reference terminal; and a control circuit coupled to a control terminal of the first transistor, the control circuit configured to disconnect the local capacitor from the reference terminal to produce a voltage overshoot in the control terminal of the cascode transistor, and after disconnecting the local capacitor from the reference terminal, limit or reduce the voltage overshoot by adjusting a voltage of the control terminal of the first transistor.
公开/授权文献
- US20200058360A1 Floating Boosted Pre-Charge Scheme for Sense Amplifiers 公开/授权日:2020-02-20
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