Invention Grant
- Patent Title: Semiconductor structure and fabrication method thereof
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Application No.: US16008756Application Date: 2018-06-14
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Publication No.: US10658248B2Publication Date: 2020-05-19
- Inventor: Zhao Xu Shen
- Applicant: Semiconductor Manufacturing International (Shanghai) Corporation , Semiconductor Manufacturing International (Beijing) Corporation
- Applicant Address: CN Shanghai CN Beijing
- Assignee: Semiconductor Manufacturing International (Shanghai) Corporation,Semiconductor Manufacturing International (Beijing) Corporation
- Current Assignee: Semiconductor Manufacturing International (Shanghai) Corporation,Semiconductor Manufacturing International (Beijing) Corporation
- Current Assignee Address: CN Shanghai CN Beijing
- Agency: Anova Law Group, PLLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@74d15552
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L29/78 ; H01L29/66 ; H01L21/28 ; H01L21/3115 ; H01L21/266 ; H01L21/311
Abstract:
Semiconductor structures and fabrication methods thereof are provided. An exemplary fabrication method includes providing a base substrate; forming a gate structure over the base substrate; forming a mask layer on a top surface of the gate structure; forming pocket regions in the base substrate at both sides of the gate structure; after forming the pocket regions, forming a first protective portion covering a top surface of the mask layer and protruding from sidewall surfaces of the gate structure; and after forming the first protective portion, forming doped source/drain regions in the base substrate and portions of the pocket regions at both sides of the gate structure.
Public/Granted literature
- US20180366376A1 SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF Public/Granted day:2018-12-20
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