Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US16173187Application Date: 2018-10-29
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Publication No.: US10658273B2Publication Date: 2020-05-19
- Inventor: Rintaro Asai
- Applicant: Denso Corporation
- Applicant Address: JP Kariya, Aichi-pref
- Assignee: Denso Corporation
- Current Assignee: Denso Corporation
- Current Assignee Address: JP Kariya, Aichi-pref
- Agency: Dinsmore & Shohl LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@67517521
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L25/07 ; H01L23/31 ; H01L23/00 ; H01L23/373 ; H01L23/433

Abstract:
A semiconductor device may include: a first and a second semiconductor elements; and a first and a second insulated substrates each including an insulator layer and a metal layer disposed on each of two faces of the insulator layer, the metal layers respectively on one face of the first and the second insulated substrate being connected to the first and the second semiconductor element, wherein the metal layers respectively on the one face of the first and the second insulated substrate are electrically connected via a joint each other; the joint is constituted of a separate member from the insulated substrates; and one end of the joint is connected to the metal layer on the one face of the first insulated substrate, and another end of the joint is connected to the metal layer on the one face of the second insulated substrate.
Public/Granted literature
- US20190131217A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2019-05-02
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