Invention Grant
- Patent Title: High density package interconnects
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Application No.: US16261475Application Date: 2019-01-29
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Publication No.: US10658279B2Publication Date: 2020-05-19
- Inventor: Sanka Ganesan , Zhiguo Qian , Robert L. Sankman , Krishna Srinivasan , Zhaohui Zhu
- Applicant: INTEL CORPORATION
- Applicant Address: US CA Santa Clara
- Assignee: INTEL CORPORATION
- Current Assignee: INTEL CORPORATION
- Current Assignee Address: US CA Santa Clara
- Agency: Konrad Raynes Davda & Victor LLP
- Agent Alan S. Raynes
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L23/00 ; H01L23/50 ; H01L21/768 ; H01L23/538

Abstract:
Electronic assemblies and methods including the formation of interconnect structures are described. In one embodiment an apparatus includes semiconductor die and a first metal bump on the die, the first metal bump including a surface having a first part and a second part. The apparatus also includes a solder resistant coating covering the first part of the surface and leaving the second part of the surface uncovered. Other embodiments are described and claimed.
Public/Granted literature
- US20190172778A1 HIGH DENSITY PACKAGE INTERCONNECTS Public/Granted day:2019-06-06
Information query
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