Invention Grant
- Patent Title: Thin-film transistor substrate
-
Application No.: US15833757Application Date: 2017-12-06
-
Publication No.: US10658393B2Publication Date: 2020-05-19
- Inventor: Jong-Hyun Choi , Tae-Jin Kim
- Applicant: Samsung Display Co., LTD.
- Applicant Address: KR
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR
- Agency: Innovation Counsel LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@23538234
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L29/78 ; H01L29/786

Abstract:
A thin-film transistor substrate may include a first thin-film transistor and a second thin-film transistor which are disposed on a substrate. The first thin-film transistor may include a first semiconductor layer, a first gate electrode, and a first electrode. The second thin-film transistor may include a second semiconductor layer disposed on the first semiconductor layer and overlapping at least a portion of the first semiconductor layer, a second gate electrode, and a second electrode electrically connected to the first electrode. The second electrode may overlap the first electrode.
Public/Granted literature
- US20180158844A1 THIN-FILM TRANSISTOR SUBSTRATE Public/Granted day:2018-06-07
Information query
IPC分类: