Invention Grant
- Patent Title: Stacked backside illuminated SPAD array
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Application No.: US15713520Application Date: 2017-09-22
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Publication No.: US10658419B2Publication Date: 2020-05-19
- Inventor: Shingo Mandai , Cristiano L. Niclass , Nobuhiro Karasawa , Xiaofeng Fan , Arnaud Laflaquiere , Gennadiy A. Agranov
- Applicant: Apple Inc.
- Applicant Address: US CA Cupertino
- Assignee: Apple Inc.
- Current Assignee: Apple Inc.
- Current Assignee Address: US CA Cupertino
- Agency: Brownstein Hyatt Farber Schreck, LLP
- Main IPC: H01L27/146
- IPC: H01L27/146 ; G01S7/486 ; H04N5/357 ; H04N5/369 ; H01L31/107 ; H04N5/355 ; H04N5/376 ; H04N5/3745 ; H04N5/378 ; H01L31/02 ; H01L31/0352 ; G01S7/4861 ; G01S7/4863

Abstract:
A back-illuminated single-photon avalanche diode (SPAD) image sensor includes a sensor wafer stacked vertically over a circuit wafer. The sensor wafer includes one or more SPAD regions, with each SPAD region including an anode gradient layer, a cathode region positioned adjacent to a front surface of the SPAD region, and an anode avalanche layer positioned over the cathode region. Each SPAD region is connected to a voltage supply and an output circuit in the circuit wafer through inter-wafer connectors. Deep trench isolation elements are used to provide electrical and optical isolation between SPAD regions.
Public/Granted literature
- US20180090526A1 Stacked Backside Illuminated SPAD Array Public/Granted day:2018-03-29
Information query
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