Invention Grant
- Patent Title: Semiconductor device, and manufacturing method thereof
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Application No.: US15607863Application Date: 2017-05-30
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Publication No.: US10665610B2Publication Date: 2020-05-26
- Inventor: Shunpei Yamazaki , Jun Koyama , Hideaki Kuwabara , Saishi Fujikawa
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@2ce9e6f1 com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@1bdd75e7 com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@2398752b
- Main IPC: H01L27/085
- IPC: H01L27/085 ; H01L27/12 ; H01L29/66 ; G02F1/1345 ; H01L27/15

Abstract:
In a display device such as a liquid crystal display device, a large-sized display screen is realized under low power consumption. A surface of a source wiring line of a pixel portion employed in an active matrix type liquid crystal display device is processed by way of a plating process operation so as to lower a resistance value of this source wiring line. The source wiring line of the pixel portion is manufactured at a step different from a step for manufacturing a source wiring line of a drive circuit portion. Further, electrodes of a terminal portion are processed by a plating process operation so as to reduce a resistance value thereof.
Public/Granted literature
- US20180019266A1 SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREOF Public/Granted day:2018-01-18
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