- 专利标题: Capacitor structure and semiconductor device including the same
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申请号: US15897931申请日: 2018-02-15
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公开(公告)号: US10665664B2公开(公告)日: 2020-05-26
- 发明人: Jong-Min Lee , Hyongsoo Kim , Jongryul Jun
- 申请人: Samsung Electronics Co., Ltd.
- 申请人地址: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- 代理机构: Muir Patent Law, PLLC
- 优先权: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@1f81f6f
- 主分类号: H01L49/02
- IPC分类号: H01L49/02 ; H01L27/108
摘要:
A capacitor structure includes a plurality of bottom electrodes horizontally spaced apart from each other, a support structure covering sidewalls of the bottom electrodes, a top electrode surrounding the support structure and the bottom electrodes, and a dielectric layer interposed between the support structure and the top electrode, and between the top electrode and each of the bottom electrodes. An uppermost surface of the support structure is positioned at a higher level than an uppermost surface of each of the bottom electrodes.
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