Invention Grant
- Patent Title: Semiconductor device and fabrication method thereof
-
Application No.: US16059900Application Date: 2018-08-09
-
Publication No.: US10665685B2Publication Date: 2020-05-26
- Inventor: Cheng-Ming Lin , Peng-Soon Lim , Zi-Wei Fang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L29/417
- IPC: H01L29/417 ; H01L21/8234 ; H01L29/78 ; H01L29/66 ; H01L21/8238
Abstract:
A method includes forming a gate dielectric layer over a semiconductor substrate, forming a first metal element-containing layer over the gate dielectric layer, and thermal soaking the first metal element-containing layer in a first gas, such that a constituent of the first gas is diffused into the first metal element-containing layer.
Public/Granted literature
- US20190165113A1 SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF Public/Granted day:2019-05-30
Information query
IPC分类:
