Thin film type solar cell and manufacturing method therefor
摘要:
Disclosed is a thin film type solar cell which prevents short circuit from occurring between a first electrode and a second electrode due to a burr produced in a separation part, thereby preventing an output from being reduced. The thin film type solar cell includes a substrate, a first electrode disposed over the substrate and being apart from an adjacent first electrode by a first separation part, a semiconductor layer disposed over the first electrode and being apart from an adjacent semiconductor layer by a contact part and a second separation part, and a second electrode disposed over the semiconductor layer and being apart from an adjacent second electrode by the second separation part. The semiconductor layer contacts the substrate through the first separation part, and the second electrode contacts the first electrode through the contact part. A height of a burr produced in the second separation part is lower than a height between the first electrode and the second electrode.
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IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件;其他类目中不包括的电固体器件(使用半导体器件的测量入G01;一般电阻器入H01C;磁体、电感器、变压器入H01F;一般电容器入H01G;电解型器件入H01G9/00;电池组、蓄电池入H01M;波导管、谐振器或波导型线路入H01P;线路连接器、汇流器入H01R;受激发射器件入H01S;机电谐振器入H03H;扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R;一般电光源入H05B;印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K;在具有特殊应用的电路中使用的半导体器件见应用相关的小类)
H01L31/00 对红外辐射、光、较短波长的电磁辐射,或微粒辐射敏感的,并且专门适用于把这样的辐射能转换为电能的,或者专门适用于通过这样的辐射进行电能控制的半导体器件;专门适用于制造或处理这些半导体器件或其部件的方法或设备;其零部件(H01L51/42优先;由形成在一共用衬底内或其上的多个固态组件,而不是辐射敏感元件与一个或多个电光源的结合所组成的器件入H01L27/00)
H01L31/04 .用作光伏〔PV〕转换器件(制造中其测试入H01L21/66;制造之后其测试入H02S50/10)
H01L31/042 ..单个光伏电池的光伏模块或者阵列(用于光伏模块的支撑结构入H02S20/00)
H01L31/0445 ...包括薄膜太阳能电池,如单个薄膜a-Si、 CIS或者CdTe太阳能电池
H01L31/046 ....由多个沉积在同一衬底上的薄膜太阳能电池组成的光伏模块
H01L31/0463 .....以模块中连接光伏电池的特殊图案形成方法为特征的,如传导层或者活性层的激光切割
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