Invention Grant
- Patent Title: Magnetoresistance effect element and method for manufacturing the same
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Application No.: US16275947Application Date: 2019-02-14
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Publication No.: US10665776B2Publication Date: 2020-05-26
- Inventor: Shinto Ichikawa , Katsuyuki Nakada , Seiji Mitani , Hiroaki Sukegawa , Kazuhiro Hono , Tadakatsu Ohkubo
- Applicant: TDK CORPORATION , NATIONAL INSTITUTE FOR MATERIALS SCIENCE
- Applicant Address: JP Tokyo JP Tsukuba-shi
- Assignee: TDK CORPORATION,NATIONAL INSTITUTE FOR MATERIALS SCIENCE
- Current Assignee: TDK CORPORATION,NATIONAL INSTITUTE FOR MATERIALS SCIENCE
- Current Assignee Address: JP Tokyo JP Tsukuba-shi
- Agency: Oliff PLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@4d17513b com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@5f77c8e9
- Main IPC: H01L43/10
- IPC: H01L43/10 ; H01L43/12 ; H01F10/32
Abstract:
Provided is a magnetoresistance effect element in which a tunnel barrier layer stably has a cation disordered spinel structure. This magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer disposed between the first ferromagnetic layer and the second ferromagnetic layer. In addition, the tunnel barrier layer is an oxide of MgxAl1-x (0≤x
Public/Granted literature
- US20190259937A1 MAGNETORESISTANCE EFFECT ELEMENT AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2019-08-22
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