Invention Grant
- Patent Title: Bulk acoustic wave resonator
-
Application No.: US15494866Application Date: 2017-04-24
-
Publication No.: US10666224B2Publication Date: 2020-05-26
- Inventor: Jea Shik Shin , Duck Hwan Kim , Chul Soo Kim , Sang Uk Son , In Sang Song , Moon Chul Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: NSIP Law
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@2bd85b3e
- Main IPC: H03H3/02
- IPC: H03H3/02 ; H03H9/17 ; H03H9/02
Abstract:
Disclosed is a bulk acoustic wave resonator (BAWR). The BAWR includes a bulk acoustic wave resonance unit with a first electrode, a second electrode, and a piezoelectric layer. The piezoelectric layer is disposed between the first electrode and the second electrode. An air edge is formed at a distance from a center of the bulk acoustic wave resonance unit.
Public/Granted literature
- US20170250672A1 BULK ACOUSTIC WAVE RESONATOR Public/Granted day:2017-08-31
Information query
