- 专利标题: Nonvolatile digital computing with ferroelectric FET
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申请号: US16580256申请日: 2019-09-24
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公开(公告)号: US10672475B2公开(公告)日: 2020-06-02
- 发明人: Xueqing Li , Sumitha George , John Sampson , Sumeet Gupta , Suman Datta , Vijaykrishnan Narayanan , Kaisheng Ma
- 申请人: The Penn State Research Foundation
- 申请人地址: US PA University Park
- 专利权人: The Penn State Research Foundation
- 当前专利权人: The Penn State Research Foundation
- 当前专利权人地址: US PA University Park
- 代理机构: Buchanan Ingersoll & Rooney PC
- 主分类号: G11C14/00
- IPC分类号: G11C14/00 ; G11C13/00 ; G11C11/22 ; H01L29/78 ; G11C11/16
摘要:
Embodiments include nonvolatile a memory (NVM) device that can be configured for logic switching and/or digital computing. For example, embodiments of the NVM device can be configured as any one or combination of a memory cell, a D flip flop (DFF), a Backup and Restore circuit (B&R circuit), and/or a latch for a DFF. Any of the NVM devices can have a Fe field effect transistors (FeFET) configured to exploit the IDS−VG hysteresis of the steep switch at low voltage for logic memory synergy. The FeFET-based devices can be configured to include a wide hysteresis, a steep hysteresis edge, and high ratio between the two IDS states at VG=0.
公开/授权文献
- US20200027508A1 Nonvolatile Digital Computing with Ferroelectric FET 公开/授权日:2020-01-23