- Patent Title: Pattern structure and method of manufacturing the pattern structure
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Application No.: US15646836Application Date: 2017-07-11
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Publication No.: US10677974B2Publication Date: 2020-06-09
- Inventor: Sunghoon Lee , Joonyong Park , Dongouk Kim , Jihyun Bae , Bongsu Shin , Dongsik Shim , Jaeseung Chung
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@1ee01620
- Main IPC: G02B5/30
- IPC: G02B5/30 ; G03F7/00 ; B28D5/02 ; G02F1/1335
Abstract:
A method for manufacturing a pattern structure includes preparing a wafer that has a plurality of fine patterns, generating a first trench by processing the wafer from a first surface to a first depth, and generating a second trench connected to the first trench by processing the wafer from a second surface which is opposite to the first surface to a second depth, thereby cutting the wafer.
Public/Granted literature
- US20180113242A1 PATTERN STRUCTURE AND METHOD OF MANUFACTURING THE PATTERN STRUCTURE Public/Granted day:2018-04-26
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